Advanced Materials and Technologies for Micro Nano-Devices, by Evgeni Gusev, Eric Garfunkel, Arthur Dideikin PDF

By Evgeni Gusev, Eric Garfunkel, Arthur Dideikin

ISBN-10: 9048138051

ISBN-13: 9789048138050

The most objective of this publication is to study fresh development and present prestige of MEMS/NEMS applied sciences and units. numerous very important components are mentioned: historical past of study within the box, machine physics, examples of sucessful purposes, sensors, fabrics and processing features. The authors who've contributed to the publication symbolize a various workforce of major scientists from educational, commercial and governmental labs around the globe who convey a extensive array of backgrounds resembling gadget physics, technologists, electric and mechanical engineering, floor chemistry and fabrics science). The contributions to this booklet are obtainable to either specialist scientists and engineers who have to stay alongside of cutting edge examine, and beginners to the sector who desire to examine extra in regards to the fascinating simple and utilized learn concerns correct to micromechanical units and applied sciences.

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Additional resources for Advanced Materials and Technologies for Micro Nano-Devices, Sensors and Actuators (NATO Science for Peace and Security Series B: Physics and Biophysics)

Example text

1–1cm/s and biased with nanoseconds to microseconds range voltage pulses. 1–1 Mbps per tip. In Figure 1, overwriting capability in ferroelectric probe storage is demonstrated for the first time using a probe tip scanning with a relatively high speed (~1 mm/s in the x-axis direction in Figure 1) and biased with a bipolar non-return-to-zero voltage write process. , vertical dimension of the bits in Figure 1) is ~40 nm. The write process shows writing first pattern (a), adding two additional writes of small bits offset from old tracks (b), erasing media (c), and writing small dots after erase (d).

Low-temperature micro-mover process does not cause inter-diffusion of the semiconductor film material and PZT. Fabrication of MEMS cantilevers with sharp tips on top of CMOS read channel circuitry is necessary to minimize noise associated with parasitic capacitance of conductors connecting tips with the circuitry and achieve high signal-to-noise ratio. There are several challenges in CMOS-MEMS process integration, including: (a) selection of high-quality mechanical material, which can be deposited at CMOScompatible temperatures and used as a structural material and (b) selection a set of processes that can be used for MEMS processing without affecting CMOS circuitry.

Two different designs of cantilevers are presented in Figure 12. Initial bending of cantilevers after release is small and, without actuation, tips do not contact the memory stack. Each cantilever can be actuated in both vertical direction toward the micro-mover and laterally. Vertical actuation brings tips in contact with the memory stack and allows some control of the force applied at the tip-memory interface. Each cantilever also has an electrostatic lateral actuator (nano-mover) for compensation of relative displacement of each tip with respect to the other tips and to the micro-mover due to temperature change.

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Advanced Materials and Technologies for Micro Nano-Devices, Sensors and Actuators (NATO Science for Peace and Security Series B: Physics and Biophysics) by Evgeni Gusev, Eric Garfunkel, Arthur Dideikin

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